The high-speed, single-channel low-side driver SGM48521Q is designed to drive GaN FETs and logic level MOSFETs. Application areas include LiDAR, time of flight, facial recognition, and power converters using low-side drivers. The SGM48521Q provides 7A source and 6A sink output current capability. Split output configuration allows individual turn-on and turn-off time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the 2.2ns propagation delay with minimized tolerances and variations allows efficient operation at high frequencies.
The driver has internal under-voltage lockout and over-temperature protection against overload and fault events.
This device is AEC-Q100 qualified (Automotive Electronics Council (AEC) standard Q100 Grade 1) and it is suitable for automotive applications.
The SGM48521Q is available in Green WLCSP-0.88×1.28-6B and TDFN-2×2-6DL packages.
AEC-Q100 Qualified for Automotive Applications
Device Temperature Grade 1
TA = -40℃ to +125℃
5V Supply Voltage
7A Peak Source and 6A Peak Sink Currents
Ultra-Fast, Low-side Gate Driver for GaN and Si FETs
Minimum Input Pulse Width: 1ns
Up to 60MHz Operation
Propagation Delay: 2.2ns (TYP), 3.5ns (MAX)
Rise Time:
WLCSP-0.88×1.28-6B: 500ps (TYP)
TDFN-2×2-6DL: 600ps (TYP)
Fall Time:
WLCSP-0.88×1.28-6B: 460ps (TYP)
TDFN-2×2-6DL: 590ps (TYP)
Protection Features:
Under-Voltage Lockout (UVLO)
Over-Temperature Protection (OTP)
Available in Green WLCSP-0.88×1.28-6B and TDFN-2×2-6DL Packages
Automotive Applications
Laser Distance Measuring System
5G RF Communication System
Wireless Charging System
GaN DC/DC Conversion System
