The high-speed, dual-channel low-side driver SGM48522 is designed to drive GaN FETs and logic level MOSFETs. The application areas include LiDAR, time of flight, facial recognition, and power converters using low-side drivers. The SGM48522 provides 7A source and 6A sink output current capability. Split output configuration allows individual turn-on and turn-off time optimization depending on FET. The Flip-Chip TQFN package and pinout minimize parasitic inductances to reduce the rise and fall time and limit the ringing. Additionally, the 2ns propagation delay with minimized tolerances and variations allows efficient operation at high frequencies.
The driver has internal under-voltage lockout and over-temperature protection against overload and fault events.
The SGM48522 is available in a Green TQFN-2×2-10BL package.
5V Supply Voltage
7A Peak Source and 6A Peak Sink Currents
Ultra-Fast, Low-side Gate Driver for GaN and Si FETs
Minimum Input Pulse Width: 1ns
Up to 60MHz Operation
Propagation Delay: 2ns (TYP)
Rise Time: 750ps (TYP)
Fall Time: 560ps (TYP)
Protection Features:
Under-Voltage Lockout (UVLO)
Over-Temperature Protection (OTP)
Available in a Green TQFN-2×2-10BL Package
Laser Distance Measuring System (LiDAR)
5G RF Communication System
Wireless Charging System
GaN DC/DC Conversion System
| Part Number | Status | Package | Pins | Pb-Free | Temp Range | |
| SGM48522XTSW10G/TR | Production | TQFN-2×2-10BL | 10 | Y | -40℃ to +125℃ | Samples |
